Journal: Advanced quantum technologies

Article Title: Advanced technologies for quantum photonic devices based on epitaxial quantum dots

doi: 10.1002/qute.201900034

Figure Lengend Snippet: (a) Conceptual quantum photonic circuit composed of a waveguide interferometric network with a directly integrated GaAs nanophotonic device containing a single InAs quantum dot. The zoomed-in image of the GaAs device region (inside the dashed boundary box) shows details of the geometry and operation principle. The light-matter interaction section of the device promotes efficient coupling between the InAs quantum dot and a confined optical mode (here, a wave confined in a GaAs waveguide). Adiabatic mode transformers allow light from the QD in the light-matter interaction region to be efficiently transferred to a Si3N4 waveguide. (b) Fabrication process in the wafer-bonding approach. The bonded GaAs / Si3N4 wafer is shown inside the dotted line, schematically at the top, and imaged in a cross-sectional scanning electron micrograph. After wafer bonding, two subsequent electron-beam lithography and etch steps (first the GaAs layer, then the Si3N4) are used to define the geometry in (a). (c) GaAs microring resonator coupled to a GaAs bus waveguide terminated into mode transformers fabricated through the process in (b). (d) Photoluminescence spectrum for the microring in (c), showing single quantum dot transition coupled to a whispering-gallery mode. Inset: second-order correlation showing antibunching characteristic of single-photon emission. Reproduced with permission.[226] Copyright 2017, Springer Nature.

Article Snippet: Before moving back to China, he worked with Dr. Kartik Srinivasan at National Institute of Standards and Technology (NIST) to develop integrated quantum photonic circuits.

Techniques:

Journal: Advanced quantum technologies

Article Title: Advanced technologies for quantum photonic devices based on epitaxial quantum dots

doi: 10.1002/qute.201900034

Figure Lengend Snippet: Schematics of hybrid photonic circuit platforms produced through pick-and-place techniques, including passive waveguides and quantum dot-based nanophotonic single-photon sources. (a) InP NW containing InAsP QD, encapsulated in a SiN waveguide and capped with a layer of polymethyl acrylate (PMMA). The nanowires were produced through a selective-area and vapor-liquid-solid epitaxy process.[129] Reproduced with permission.[239] Copyright 2016, American Chemical Society. (b) InP nanobeam with embedded InAs QDs, placed above a Si waveguide on a SiO2 waveguide. Reproduced with permission.[240] Copyright 2017, American Chemical Society. (c) GaAs photonic crystal cavity containing InAs QDs, placed over a GaAs waveguide on a SiO2 substrate, spaced from it by distance d, by way of a planarized spin-on-glass (SOG) layer. Reproduced with permission.[242] Copyright 2018, Optical Society of America. (d) Schematic of quantum memories based on diamond nanobeams with NV centers, coupled to SiN waveguides. Reproduced with permission.[238] Copyright 2014, American Physical Society. (e) Right panel: illustration of NbN superconducting nanowire single-photon detector on a SiN membrane being transferred onto a silicon-on-insulator photonic waveguide. Right panel: Schematic of a photonic chip with four waveguide-integrated detectors (A1, A2, B1 and B2). Reproduced with permission.[256] Copyright 2015, Springer Nature.

Article Snippet: Before moving back to China, he worked with Dr. Kartik Srinivasan at National Institute of Standards and Technology (NIST) to develop integrated quantum photonic circuits.

Techniques: Produced, Membrane

Journal: Proceedings of the Institution of Mechanical Engineers. Part H, Journal of Engineering in Medicine

Article Title: Neonatal head and torso vibration exposure during inter-hospital transfer

doi: 10.1177/0954411916680235

Figure Lengend Snippet: Summary of sensor configuration.

Article Snippet: To reduce the size of the resin-encapsulated sensor for forehead attachment (where a large sensor could potentially induce resonant modes), a combined accelerometer and rate gyroscope integrated circuit (IC) was used (LSM330; STMicroelectronics, Geneva, Switzerland), and this sensor had a 14 mm outer diameter and 3 g encapsulated mass. is a labelled image of the complete system.

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